http://localhost:80/xmlui/handle/123456789/367 Fri, 08 May 2026 17:42:58 GMT 2026-05-08T17:42:58Z http://localhost:80/xmlui/handle/123456789/372 Title: Exploring anisotropic phases and spin transport in perovskite heterostructures: Insights into 3d/5d interfaces for antiferromagnetic spintronics Authors: Sardar, Suman Abstract: Transition metal oxides (TMOs) demonstrate a broad spectrum of properties encompassing electronic correlations, anisotropic transport, magnetism, and optical behavior. The anisotropy arises from both intrinsic crystal symmetry and extrinsic factors like epitaxial strain and structural asymmetry at TMO interfaces. Weiss and Neel's work has elucidated anisotropic magnetic behavior in antiferromagnetic (AFM) materials. AFM TMOs exhibit unique magnetotransport behavior, including weak antilocalization (WAL) and anisotropic magnetoresistance (AMR). Understanding the magnetic structure and band topology in AFM perovskites and their interfaces enables the tailored design of materials for spintronics and energy conversion. In few interfaces lacking inversion symmetry, Rashba spin–orbit coupling (SOC) induces WAL, a quantum correction in conductivity in a two-dimensional electronic system. Electron accumulation and charge transfer across 3d, 5d transition metal-based perovskite interfaces affect WAL and AMR, as observed in 3d/3d and 3d/5d AFM heterostructures, respectively. Advancements in spintronics rely on exploring spin-dependent transport anisotropy. This review focuses on various scattering mechanisms, categorized as extrinsic and intrinsic, in anisotropic transport, particularly in 3d/5d AFM superlattices. The WAL scattering mechanism depends on both intrinsic factors related to Rashba SOC-induced band topology and extrinsic sources like spin impurities and lattice ions. Moreover, the investigation into AMR mechanisms involves the application of impurity-based extrinsic scattering models, which are aligned with the Rashba and Dresselhauss models on Fermi surfaces. This exploration specifically targets the interface of two-band insulators, exemplified by LaAlO3/SrTiO3 and LaVO3/KTaO3. Furthermore, this model achieves comprehensive coverage, extending its applicability to 3d/5d AFM heterostructures like LaMnO3/SrIrO3 and CaMnO3/CaIrO3. Additionally, the intrinsic scattering mechanism tied to Berry phase effects related to band topology is studied, focusing on the CaMnO3/CaIrO3 superlattice. Despite manipulation challenges stemming from reduced stray fields, AFM materials show potential in interface physics and applications within the realm of spintronics. Thu, 29 Feb 2024 00:00:00 GMT http://localhost:80/xmlui/handle/123456789/372 2024-02-29T00:00:00Z http://localhost:80/xmlui/handle/123456789/368 Title: Designed and synthesized de novo ANTPABA-PDI nanomaterial as an acceptor in inverted solar cell at ambient atmosphere Authors: Bagui, Anirban Abstract: In this work, a novel soluble and air-stable electron acceptor containing perylenediimide moiety named ANTPABA-PDI was designed and synthesized with band gap 1.78eV and that was used as non-fullerene acceptor material. ANTPABA-PDI possess not only good solubility but also much lower LUMO (lowest unoccupied molecular orbital) energy level. Furthermore, its excellent electron acceptor capability also supported by density functional theory calculation which validates the experimental observations. Inverted organic solar cell has been fabricated using ANTPABA-PDI along with P3HT as standard donor material in ambient atmosphere. The device, after characterization in open air, exhibited a power conversion efficiency of 1.70%. This is the first ever PDI based organic solar cell that has been fabricated completely in ambient atmosphere. The characterizations of the device have also been performed in ambient atmosphere. This kind of stable organic material can easily be used in fabricating organic solar cell and therefore it can be used as the best alternative as non-fullerene acceptor materials. Fri, 01 Sep 2023 00:00:00 GMT http://localhost:80/xmlui/handle/123456789/368 2023-09-01T00:00:00Z